Overview of Variable Angle Spectroscopic Ellipsometry (VASE), Part I: Basic Theory and Typical Applications

Authors: John A. Woollam, Blain Johs, Craig M. Herzinger, James N. Hilfiker, Ron Synowicki, and Corey Bungay 

SPIE Proceedings, CR72, (1999) 29-58.

Overview of Variable Angle Spectroscopic Ellipsometry (VASE), Part II: Advanced Applications

Authors: Blain Johs, John A. Woollam, Craig M. Herzinger, James N. Hilfiker, Ron Synowicki, and Corey Bungay

SPIE Proceedings, CR72, (1999).

Ellipsometry, Variable Angle Spectroscopic, Chapter out of Wiley Encyclopedia of Electrical and Electronics Engineering

Author: J. A. Woollam

Editor: John G. Weber 

John Wiley and Sons, Inc.  New York, NY, (2000).

Progress in spectroscopic ellipsometry:  Applications from vacuum ultraviolet to infrared

Authors: J. N. Hilfiker, C.L. Bungay, R.A. Synowicki, T. E. Tiwald, C.  M. Herzinger, B Johs, G. K. Pribil, and J. A. Woollam

J. Vac. Sci. Technol. A,21, 4 (2003) in press

Spectroscopic Ellipsometry From the Vacuum Ultraviolet to the Far Infrared

Authors: John A. Woollam, James N. Hilfiker, Corey Bungay, Ron Synowicki, Thomas E. Tiwald, and Daniel W. Thompson

Proc. AIP- Characterization and Metrology for ULSI Technology, CP550 (2001) 511-518

Riding the Wavelength

Authors:  J. Hilfiker 

oe Magazine, June (2001) 56.

The Advantages of Spectroscopic Ellipsometry for Flat Panel Display Applications

Authors: J. N. Hilfiker and R. Synowicki

Semiconductor Fabtech, 6 (1997) 393-398.

Characterizing Thin Films in the Flat Panel Display Industry with Variable Angle Spectroscopic Ellipsometry (VASE)

Authors:  J. N. Hilfiker, R. Synowicki, J. S. Hale, and C. Bungay

1998 SID Intl. Symp. Technical Digest, XXIX (1998).

Spectroscopic Ellipsometry Studies of Indium Tin Oxide and Other Flat Panel Display Multilyaer Materials

Authors: J. A. Woollam, W. A. McGahan, and B. Johs

Thin Solid Films, 241 (1994).

Spectroscopic Ellipsometry Characterization of Indium Tin Oxide Film Microstructure and Optical Constants

Authors: R. A. Synowicki

Thin Solid Films, 313-314 (1998) 394-397.

Generalized transmission ellipsometry for twisted biaxial dielectric media: application to chiral liquid crystals

Authors: M. Schubert, B. Rheinlander, C. Cramer, H. Schmiedel, J. A. Woollam, C. M. Herzinger and B. Johs

J. Opt. Soc. Am. A, 13 (1996) 1930-1940.

Recent Developments in Spectroscopic Ellipsometry for in situ Applications

Authors: B. Johs et al.

SPIE Proc. 4449 (2001) 41-57.

In Situ Ellipsometry in Microelectronics

Authors: E. A. Irene and J. A. Woollam

MRS Bulletin, 20 (1995) 24-28.

Optical monitoring of Thin-films using Spectroscopic Ellipsometry

Authors: D. E. Morton, B. Johs, and J. Hale

SVC 45th Annual Tech. Conf. Proc. (2002) 299-305.

Etch depth control in bulk GaAs using patterning and real time spectroscopic ellipsometry

Authors: S. J. Cho, P. G. Snyder, C. M. Herzinger, and B. Johs

J. Vac. Sci. Technol. B, 20 (2002) 197-202.

Closed-loop control of resonant tunneling diode barrier thickness using in situ spectroscopic ellipsometry

Authors: J. A. Roth, W. S. Williamson, D. H. Chow, G. L. Olson, and B. Johs

J. Vac. Sci. Technol. B, 18 (2000) 1439-1442.

Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry

Authors:  B. Johs, C. Herzinger, J. H. Dinan, A. Cornfeld, J. D. Benson, D. Doctor, G. Olson, I. Ferguson, M. Pelczynski, P. Chow, C. H. Kuo, and S. Johnson

Thin Solid Films, 313-314 (1998) 490-495.

Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth

Authors: B. Johs, C. M. Herzinger, J. H. Dinan, A. Cornfeld, and J. D. Benson

Thin Solid Films, 313-314 (1998) 137-142

Real-time monitoring and control during MBE growth of GaAs/AlGaAs Bragg reflectors using multi-wavelength ellipsometry

Authors: B. Johs, C. Herzinger, P. He, S. Pittal, J. Woollam, and T. Wagner

Mat. Sci. and Eng. B, 44 (1997) 134-138.

In Situ Multi-Wavelength Ellipsometric Control of Thickness and Composition for Bragg Reflector Structures

Authors: C. Herzinger, B. Johs, P. Chow, D. Reich, G. Carpenter, D. Croswell, and J. Van Hove

MRS Symp. Proc., 406 (1996) 347-352.

Studies of Metallic Multilayer Structures, Optical Properties, and Oxidation using in situ Spectroscopic Ellipsometry

Authors: X. Gao, J. S. Hale, S. Heckens, and J. A. Woollam

J. Vac. Sci. Technol. A, 16 (1998) 429-435.

In situ and ex situ optical characterization of electro deposited magneto-optic materials

Authors: J. N. Hilfiker, D. W. Glenn, S. Heckens, J. A. Woollam, and K. W. Wierman

J. Appl. Phys., 79 (1996) 6193-6195.

Spectroscopic Ellipsometry for Data Storage Applications

Authors:  J. N. Hilfiker, R. Synowicki, J. S. Hale, and C. Bungay

DataTech, 1 (1998) 175-182

Carbon overcoats with controlled properties: Non-destructive Ellipsometry Evaluation

Authors:  W. A. McGahan, T. Makovicka, J. S. Hale, and J. A. Woollam

Surface and Coatings Technology, 62 (1993) 707-710.

Determination of the interfacial magneto-optical effects in Co/Pt multilayer structures

Authors: 　X. Gao, D. W. Thompson, and J. A. Woollam

Appl. Phys. Lett., 70 (1997) 3203-3205.

Spectroscopic ellipsometry and magneto-optic Kerr effects in Co/Pt multilayers

Authors: X. Gao, D. W. Glenn, S. Heckens, D. W. Thompson, and J. A. Woollam

J. Appl. Phys., , 82 (1997) 4525-4530.

Optical and Magneto-Optical Constants of MnPt3

Authors: K. W. Wierman, J. N. Hilfiker, R. F. Sabiryanov, S. S. Jaswal, R. D. Kirby, and J. A. Woollam

Phys. Rev. B, 55 (1997) 3093-3099.

Progress in spectroscopic ellipsometry: Applications from vacuum ultraviolet to infrared

Authors:  J. N. Hilfiker, C. L. Bungay, R. A. Synowicki, T. E. Tiwald, C. M. Herzinger, B. Johs, G. K. Pribil, and J. A. Woollam

J. Vac. Sci. Technol. A, 21, 4 (2003) in press.

Spectroscopic Ellipsometry (SE) for materials characterization at 193 and 157 nm

Authors:  J. N. Hilfiker, F. G. Celii, W. D. Kim, E. A. Joseph, C. Gross, T. Y. Tsui, R. B. Willecke, J. L. Large, and D. A. Miller

Semiconductor Fabtech 17 (2002) 87-91.

Materials Characterization in the Vacuum Ultraviolet with Variable Angle Spectroscopic Ellipsometry

Authors: T. Wagner, J. N. Hilfiker, T. E. Tiwald, C. Bungay, S. Zollner

Phys. Stat. Sol. (a), 188 (2001) 1553-1562.

Variable Angle Spectroscopic Ellipsometry in the Vacuum Ultraviolet

Authors: J. A. Woollam, J. N. Hilfiker, T. E. Tiwald, C. Bungay, R. Synowicki, D. Meyer, C. M. Herzinger, G. Pfeiffer, G. Cooney, and S. Green

Proc. SPIE, 4099 (2000) 197-205.

Spectroscopic Ellipsometry in the Vacuum Ultraviolet: 157 nm and Below

Authors: J. N. Hilfiker, C. Bungay, R. Synowicki, T. E. Tiwald, and M. Liphardt

Future Fab International, 8 (2000) 243-247.

Ellipsometry on Anisotropic Materials: Bragg Conditions and Phonons in Dielectric Helical Thin Films

Authors:  M. Schubert and C. M. Herzinger

Phys. Stat. Sol. (a), 188 (2001) 1563-1575.

Infrared dielectric anisotropy and phonon modes of sapphire

Authors:  M. Schubert, T. E. Tiwald, and C. M. Herzinger

Phys. Rev. B, 61 (2000) 8187-8201.

Characterization of Biaxially-Stretched Plastic Films by Generalized Ellipsometry

Authors: J. F. Elman, J. Greener, C. M. Herzinger, and B. Johs

Thin Solid Films, 313-314 (1998) 814-818.

Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2

Authors: M. Schubert, B. Rheinlander, J. A. Woollam, B. Johs, and C. M. Herzinger

J. Opt. Soc. Am. A, 13 (1996) 875-883.

Generalized transmission ellipsometry for twisted biaxial dielectric media: application to chiral liquid crystals

Authors: M. Schubert, B. Rheinlander, C. Cramer, H. Schmiedel, J. A. Woollam, C. M. Herzinger and B. Johs

J. Opt. Soc. Am. A, 13 (1996) 1930-1940.

Ellipsometric Determination of Optical Constants for Silicon and Thermally Grown Silicon Dioxide via a Multi-sample, Multi-wavelength, Multi-angle Investigation

Authors: C. M. Herzinger, B. Johs, W. A. McGahan, J. A. Woollam, and W. Paulson

J. Appl. Phys., 83 (1998) 3323-3336.

Fundamental studies on large area Cu(In,Ga)Se2 films for high efficiency solar cells

Authors:  A. M. Hermann, C. Gonzalez, P. A. Ramakrishnan, D. Balzar, N. Popa, P. Rice, C. H. Marshall, J. N. Hilfiker, and T. Tiwald, P. J. Sebastian, M. E. Calixto, and R. N. Bhattacharya

Solar Energy Materials and Solar Cells, 70 (2001) 345-361.

Growth and characterization of large area Cu(In,Ga)Se2 films

Authors: A. M. Hermann, C. Gonzalez, P. A. Ramakrishnan, D. Balzar, C. H. Marshall, J. N. Hilfiker, and T. Tiwald

Thin Solid Films, 387 (2001) 54-56.

Deposition factors and band gap of zinc-blende AlN

Authors: M. P. Thompson, G. W. Auner, T. S. Aheleva, K. A. Jones, S. J. Simko, and J. N. Hilfiker

J. Appl. Phys., 89 (2001) 3331-3336.

Optical Properties of Bulk and Thin-film SrTiO3 on Si and Pt

Authors: S. Zollner, A. A. Demkov, R. Liu, P. L. Fejes, R. B. Gregory, P. Alluri, J. A. Curless, Z. Yu, J. Ramdani, R. Droopad, T. E. Tiwald, J. N. Hilfiker, and J. A. Woollam

J. Vac. Sci. Technol. B, 18 (2000) 2242-2254.

Optical Constants of (Al0.98Ga0.02)xOy Native Oxides

Authors: K. J. Knopp, R. P. Mirin, D. H. Christensen, K. A. Bertness, A. Roshko, and R. A. Synowicki

Appl. Phys. Lett., 73 (1998) 3512-3514.

Infrared free carrier response of InGaAsSb epilayers on GaSb

Authors: P. G. Snyder, T. E. Tiwald, D. W. Thompson, N. J. Ianno, J. A. Woollam, M. G. Mauk, and Z. A. Shellenbarger

Thin Solid Films, 313-314 (1998) 667-670.

How to Measure Birefringence with Ellipsometry

Authors: J. Hilfiker

R&D Magazine, 44 (2002) 19.

Spectroscopic Ellipsometry in Optical Coatings Manufacturing

Authors: J. N. Hilfiker, J. S. Hale, B. D. Johs, T. E. Tiwald, R. A. Synowicki, C. L. Bungay, and J. A. Woollam

SVC 44th Annual Tech. Conf. Proc. (2001) 295-300.

Spectroscopic Ellipsometry, Its Uses for Multilayer Thin Film Characterization

Authors:  C. Bungay, J. Hilfiker, M. Liphardt, and R. Synowicki

Vacuum and ThinFilm, October 1999.

Long-wavelength cutoff filters of a new type

Authors: J. A. Dobrowolski, L. Li, and J. N. Hilfiker

Appl. Opt., 38 (1999) 4891-4903.

Optical phonon modes and interband transitions in cubic AlxGa1-xN films

Authors: A. Kasic, M. Schubert, T. Frey, U. Kohler, D. J. As, and C. M. Herzinger

Phys. Rev. B, 65 (2002) 184302/1-13.

Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks

Authors: E. B. Franke, C. L. Trimble, J. S. Hale, M. Schubert, and J. A. Woollam

J. Vac. Sci. Technol. B, 19 (2001) 2665-2670.

All-solid-state electrochromic reflectance device for emittance modulation in the far-infrared spectral region

Authors: T. Wagner, J. N. Hilfiker, T. E. Tiwald, C. Bungay, S. Zollner

Appl. Phys. Lett., 77 (2000) 1-4.

Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry

Authors: A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald

Phys. Rev. B, 62 (2000) 7365-7377.

Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry

Authors: T. E. Tiwald, J. A. Woollam, S. Zollner, J. Christiansen, R. B. Gregory, T. Wetteroth, S. R. Wilson, and A. R. Powell

Phys. Rev. B, 60 (1999) 11464-11474.

Determination of the mid-IR optical constants of water and lubricants using IR ellipsometry combined with an ATR cell

Authors: T. E. Tiwald, D. W. Thompson, J. A. Woollam, and S. V. Pepper

Thin Solid Films, 313-314 (1998) 718-721.

Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profiles

Authors: T. E. Tiwald, D. W. Thompson, J. A. Woollam, W. Paulson, and R. Hance

Thin Solid Films, 313-314 (1998) 661-666.

Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry

Authors: T. E. Tiwald, D. W. Thompson, and J. A. Woollam

J. Vac. Sci. Technol. B 16 (1998) 312-315.

Measurement of Silicon Doping Profiles using Infrared Ellipsometry Combined with Anodic Oxidation Sectioning

Authors: T. E. Tiwald, A. D. Miller, and J. A. Woollam

Proc. AIP - Characterization and Metrology for ULSI Technology, CP449 (1998) 221-225.

Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry

Authors: M. Schubert, E. Franke, H. Neumann, T. E. Tiwald, D. W. Thompson, J. A. Woollam, and J. Hahn

Thin Solid Films, 313-314 (1998) 692-696.

Spectroscopic Ellipsometry (SE) for materials characterization at 193 and 157 nm

Authors: J. N. Hilfiker, F. G. Celii, W. D. Kim, E. A. Joseph, C. Gross, T. Y. Tsui, R. B. Willecke, J. L. Large, and D. A. Miller

Semiconductor Fabtech 17 (2002) 87-91.

New Frontiers for Spectroscopic Ellipsometry

Authors:  J. N. Hilfiker, T. E. Tiwald, and C. L. Bungay

Compound Semiconductor, 7 (2001) 76-80.

Spectroscopic Ellipsometry for Process Applications

Authors:  J. N. Hilfiker and R. A. Synowicki

Solid State Technology, 39 (1996) 157-167.

Thin Film Metrology of Silicon on Insulator Materials

Authors: S. Zollner, T.-C. Lee, K. Noehring, A. Konkar, N. D. Theodore, W. M. Huang, D. Monk, T. Wetteroth, and S. R. Wilson, and J. N. Hilfiker

Appl. Phys. Lett., 76 (2000) 46-48.

Spectroscopic Ellipsometry (SE) for materials characterization at 193 and 157 nm

Authors: J. N. Hilfiker, F. G. Celii, W. D. Kim, E. A. Joseph, C. Gross, T. Y. Tsui, R. B. Willecke, J. L. Large, and D. A. Miller

Semiconductor Fabtech 17 (2002) 87-91.

Employing Spectroscopic Ellipsometry for Lithography Applications

Authors: J. N. Hilfiker and R. A. Synowicki

Semiconductor Fabtech, 5 (1996) 189-194.

Optical characterization in the vacuum ultraviolet with Variable Angle Spectroscopic Ellipsometry: 157 nm and below

Authors: J. N. Hilfiker, B. Singh, R. A. Synowicki, and C. Bungay

Proc. SPIE, 3998 (2000) 390-398.

Fluoropolymers for 157 nm Lithography: Optical Properties from VUV Absorbance and Ellipsometry Measurements

Authors: R. H. French, R. Wheland, D. J. Jones, J. N. Hilfiker, R. Synowicki, R. Zumsteg, J. Feldman, A. Feiring

Proc. SPIE, 4000 (2000) 1491-1502.

Refractive Index Measurements of Photoresist and Antireflective Coatings with Variable Angle Spectroscopic Ellipsometry

Authors: R. A. Synowicki, J. N. Hilfiker, R. R. Dammel, and C. L. Henderson

Proc. SPIE, 3332 (1998) 384-390.

Dependence of Optical Constants of AZ Barli・Bottom Coating on Bake Condition

Authors:   R. R. Dammel, J. Sagan, and R. A. Synowicki

Proc. SPIE, 3049 (1997) 963-973.

Induced Changes in the Dispersion Curves of DNQ Photoresists

Authors:   C. L. Henderson, C. G. Willson, R. R. Dammel, and R. A. Synowicki

Proc. SPIE, 3049 (1997) 585-595.

Optical Analysis of Complex Multilayer Structures Using Multiple Data Types

Authors:  B. Johs, R. H. French, F. D. Kalk, W. A. McGahan, and J. A. Woollam

Proc. SPIE, 2253 (1994) 1098-1106.

Spectroscopic ellipsometry for polymer thin films

Authors: J. N. Hilfiker, R. A. Synowicki, C. L. Bungay, and R. Carpio

Solid State Technology, 41 (1998) 101-110.

Optical characterization of anisotropic plastics

Authors:  J. N. Hilfiker, C. M. Herzinger, C. L. Bungay, J. A. Woollam, and J. F. Elman

Optical Interference Coatings Topical Meeting (1998)

Authors:  J. Hilfiker, R. Synowicki Solid State Technology, 39 (1996).

Study of surface chemical changes and erosion rates for CV-1144-O silicone under electron cyclotron resonance oxygen plasma exposure

Authors: L. Yan, X. Gao, C. Bungay, J. A. Woollam

J. Vac. Sci. Tech. A, 19(2), Mar/Apr 2001, 447-454

VUV and IR spectroellipsometric studies of polymer surfaces

Authors: J. A. Woollam, C. Bungay, J. N. Hilfiker, and T. Tiwald

Nuclear Instruments and Methods in Physics Research B, 208 (2003) 35-39.