エリプソメトリー全般に関する論文
Overview of Variable Angle Spectroscopic Ellipsometry (VASE), Part I: Basic Theory and Typical Applications
Authors: John A. Woollam, Blain Johs, Craig M. Herzinger, James N. Hilfiker, Ron Synowicki, and Corey Bungay
SPIE Proceedings, CR72, (1999) 29-58.
Overview of Variable Angle Spectroscopic Ellipsometry (VASE), Part II: Advanced Applications
Authors: Blain Johs, John A. Woollam, Craig M. Herzinger, James N. Hilfiker, Ron Synowicki, and Corey Bungay
SPIE Proceedings, CR72, (1999).
Progress in spectroscopic ellipsometry: Applications from vacuum ultraviolet to infrared
Authors: J. N. Hilfiker, C.L. Bungay, R.A. Synowicki, T. E. Tiwald, C. M. Herzinger, B Johs, G. K. Pribil, and J. A. Woollam
J. Vac. Sci. Technol. A,21, 4 (2003) in press
Quantifying the Accuracy of Ellipsometer Systems -NEW!
Authors: B. Johs, C.M. Herzinger
Phys.Stat. Sol. (c), No.5, (2008) 1301-1035.
フラットパネルディスプレイ技術の論文
The Advantages of Spectroscopic Ellipsometry for Flat Panel Display Applications
Authors: J. N. Hilfiker and R. Synowicki
Semiconductor Fabtech, 6 (1997) 393-398.
Generalized Spectroscopic Ellipsometry and Mueller-Matrix Study of Twisted Nematic and Super Twisted Nematic Liquied CrystalsAuthors: J. Hilfiker, B. Johs, C. Herzinger, J. F. Elman, E. Montbach, D. Bryant, and P. J. Bos Thin Solid Films, 455-456, (2004) 596-600.
Spectroscopic Ellipsometry Characterization of Indium Tin Oxide Film Microstructure and Optical Constants
Authors: R. A. Synowicki
Thin Solid Films, 313-314 (1998) 394-397.
Spectroscopic Ellipsometry Characterisation: Silicon-based Solar Cells -NEW! Authors: J. Hilfiker, R. Synowicki Photovoltaics International PV Event Supplement, June/July (2008), 19-21.
In-situエリプソメトリーに関する論文
In situ Spectroscopic Ellipsometry as a Versatile Tool for Studying Atomic Layer Deposition -NEW! Authors: E. Langereis, S.B.S. Heil, H.C.M Knoops, W. Keuning, M.C.M. van de Sanden, and M.M. Kessel J. Phys. D: Appl. Phys. 42 (2009) 073001 (19pp).
Recent Developments in Spectroscopic Ellipsometry for in situ Applications
Authors: B. Johs et al.
SPIE Proc. 4449 (2001) 41-57.
General Virtual Interface Algorithm for In Situ Spectroscopic Ellipsometric Data Analysis -NEW! Author: B. Johs Thin Solid Films, 455-456, (2004) 632-638.
Closed-loop control of resonant tunneling diode barrier thickness using in situ spectroscopic ellipsometry
Authors: J. A. Roth, W. S. Williamson, D. H. Chow, G. L. Olson, and B. Johs
J. Vac. Sci. Technol. B, 18 (2000) 1439-1442.
データストレージ分野の論文
Spectroscopic Ellipsometry for Data Storage Applications
Authors: J. N. Hilfiker, R. Synowicki, J. S. Hale, and C. Bungay
DataTech, 1 (1998) 175-182
Spectroscopic ellipsometry and magneto-optic Kerr effects in Co/Pt multilayers
Authors: X. Gao, D. W. Glenn, S. Heckens, D. W. Thompson, and J. A. Woollam
J. Appl. Phys., , 82 (1997) 4525-4530.
異方性に関する論文
Ellipsometry on Anisotropic Materials: Bragg Conditions and Phonons in Dielectric Helical Thin Films
Authors: M. Schubert and C. M. Herzinger
Phys. Stat. Sol. (a), 188 (2001) 1563-1575.
Infrared dielectric anisotropy and phonon modes of sapphire
Authors: M. Schubert, T. E. Tiwald, and C. M. Herzinger
Phys. Rev. B, 61 (2000) 8187-8201.
Characterization of Biaxially-Stretched Plastic Films by Generalized Ellipsometry
Authors: J. F. Elman, J. Greener, C. M. Herzinger, and B. Johs
Thin Solid Films, 313-314 (1998) 814-818.
Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2
Authors: M. Schubert, B. Rheinlander, J. A. Woollam, B. Johs, and C. M. Herzinger
J. Opt. Soc. Am. A, 13 (1996) 875-883.
Generalized transmission ellipsometry for twisted biaxial dielectric media: application to chiral liquid crystals
Authors: M. Schubert, B. Rheinlander, C. Cramer, H. Schmiedel, J. A. Woollam, C. M. Herzinger and B. Johs
J. Opt. Soc. Am. A, 13 (1996) 1930-1940.
材料研究の論文
Ellipsometric Determination of Optical Constants for Silicon and Thermally Grown Silicon Dioxide via a Multi-sample, Multi-wavelength, Multi-angle Investigation
Authors: C. M. Herzinger, B. Johs, W. A. McGahan, J. A. Woollam, and W. Paulson
J. Appl. Phys., 83 (1998) 3323-3336.
Optical Properties of Bulk c-ZrO2, c-MgO and a-As2S3 Determined by Variable Angle Spectroscopic Ellipsometry -NEW! Authors: R. Synowicki and T. Tiwald Thin Solid Films, 455-456, (2004) 248?255.
Vacuum Ultra-violet Spectroscopic Ellipsometry Study of Single- and Multi-phase Nitride Protective Films -NEW! Authors: S.M. Aouadi, A. Bohnhoff, T. Amriou, M. Williams, J.N. Hilfiker, N. Singh, and J.A. Woollam J. Phys.: Condens. Matter, 18, (2006) S1691?S1701.
Suppression of Backside Reflections from Transparent Substrates -NEW! Authors: R.A. Synowicki Phys. Stat. Sol. (c) 5, No. 5, (2008) 1085?1088.
Dielectric Function Representation by B-splines -NEW! Authors: B. Johs, J.S. Hale Phys. Stat. Sol. (a), (2008) 1-5.
光学コーティング分野の論文
How to Measure Birefringence with Ellipsometry
Authors: J. Hilfiker
R&D Magazine, 44 (2002) 19.
Spectroscopic Ellipsometry in Optical Coatings Manufacturing
Authors: J. N. Hilfiker, J. S. Hale, B. D. Johs, T. E. Tiwald, R. A. Synowicki, C. L. Bungay, and J. A. Woollam
SVC 44th Annual Tech. Conf. Proc. (2001) 295-300.
Long-wavelength cutoff filters of a new type
Authors: J. A. Dobrowolski, L. Li, and J. N. Hilfiker
Appl. Opt., 38 (1999) 4891-4903.
赤外域エリプソメトリーに関する論文
Optical phonon modes and interband transitions in cubic AlxGa1-xN films
Authors: A. Kasic, M. Schubert, T. Frey, U. Kohler, D. J. As, and C. M. Herzinger
Phys. Rev. B, 65 (2002) 184302/1-13.
Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks
Authors: E. B. Franke, C. L. Trimble, J. S. Hale, M. Schubert, and J. A. Woollam
J. Vac. Sci. Technol. B, 19 (2001) 2665-2670.
All-solid-state electrochromic reflectance device for emittance modulation in the far-infrared spectral region
Authors: T. Wagner, J. N. Hilfiker, T. E. Tiwald, C. Bungay, S. Zollner
Appl. Phys. Lett., 77 (2000) 1-4.
Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry
Authors: A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald
Phys. Rev. B, 62 (2000) 7365-7377.
Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry
Authors: T. E. Tiwald, J. A. Woollam, S. Zollner, J. Christiansen, R. B. Gregory, T. Wetteroth, S. R. Wilson, and A. R. Powell
Phys. Rev. B, 60 (1999) 11464-11474.
Determination of the mid-IR optical constants of water and lubricants using IR ellipsometry combined with an ATR cell
Authors: T. E. Tiwald, D. W. Thompson, J. A. Woollam, and S. V. Pepper
Thin Solid Films, 313-314 (1998) 718-721.
Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profiles
Authors: T. E. Tiwald, D. W. Thompson, J. A. Woollam, W. Paulson, and R. Hance
Thin Solid Films, 313-314 (1998) 661-666.
Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry
Authors: T. E. Tiwald, D. W. Thompson, and J. A. Woollam
J. Vac. Sci. Technol. B 16 (1998) 312-315.
Measurement of Silicon Doping Profiles using Infrared Ellipsometry Combined with Anodic Oxidation Sectioning
Authors: T. E. Tiwald, A. D. Miller, and J. A. Woollam
Proc. AIP - Characterization and Metrology for ULSI Technology, CP449 (1998) 221-225.
Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry
Authors: M. Schubert, E. Franke, H. Neumann, T. E. Tiwald, D. W. Thompson, J. A. Woollam, and J. Hahn
Thin Solid Films, 313-314 (1998) 692-696.
半導体分野の論文
Authors: E. Nolot, A. Lefevre, J. Hilfiker
Phys. Stat. Sol. (c) 5, No.5, 17, (2008) 1168-1171.
Spectroscopic Ellipsometry (SE) for materials characterization at 193 and 157 nm
Authors: J. N. Hilfiker, F. G. Celii, W. D. Kim, E. A. Joseph, C. Gross, T. Y. Tsui, R. B. Willecke, J. L. Large, and D. A. Miller
Semiconductor Fabtech 17 (2002) 87-91.
Immersion Fluids for Lithography: Refractive Index Measurement Using Prism Minimum Deviation Techniques -NEW!
Authors: R. Synowicki, G. Pribil, G. Cooney, C. Herzinger, S. Green, R. H. French, M. K. Yang, M. F. Lemon, J. H. Burnett, and S. Kaplan
Semiconductor Fabtech, 22, (2004) 55-58.
Spectroscopic Ellipsometry as a Potential In-Line Optical Metrology Tool for Relative Porosity Measurements of Low- K Dielectric Films -NEW!
Authors: N. V. Edwards, J. Vella, Q. Xie, S. Zollner, D. Werho, I. Adhihetty, R. Liu, T. Tiwald, C. Russell, J. Vires, and K. H. Junkerd
Mat. Res. Soc. Symp. Proceedings, 697, (2002) P4.7.1-P4.7.6.
Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model -NEW!
Authors: J. Wagner, A. Ranakrishnan, H. Obloh, M. Kunzer, K. Kohler, and B. Johs
MRS Internet J. Nitride Semicond. Res. XX, WY.Y, (2000).
バイオテクノロジー・化学分野の論文
VUV and IR Spectroellipsometric Studies of Polymer Surfaces -NEW! Authors: J. A. Woollam, C. Bungay, J. Hilfiker, T. Tiwald, and W. Paulson Nucl. Instr. and Meth. in Phys. Res. B, 208, (2003) 35-39.
Infrared Spectroscopic Ellipsometry Study of Molecular Orientation Induced Anisotropy in Polymer Substrates -NEW! Authors: C. Bungay and T. Tiwald Thin Solid Films, 455-456, (2004) 272-277.
Characterization of UV Irradiated Space Application Polymers by Spectroscopic Ellipsometry -NEW! Authors: C. Bungay, T. Tiwald, M. Devries, B. Dworak, and J. A. Woollam Polymer Engineering and Science, 40, 2, (2000) 300-309.
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